Thermal model and experimental validation of IRF 3205 MOSFET switches for inverter applications
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Date
2018-03-05
Authors
Onoroh, F.
Enibe, S.O
Adewumi, O.O
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Abstract
Power inverters operate under dynamic loads; the varying loads cause thermal expansion and contraction, which stress
the internal boundaries between the material layers in the semiconductor. Eventually, the stress wears out the
semiconductor module which ultimately leads to thermally induced failure. The primary goal of this article is to present
thermal model for the IRF 3205 MOSFET chip switching operation for a power inverter. The solution of the models is
implemented in MATLAB R2013a environment to obtain the transient temperature profile. The transient device
temperatures are recorded with a K-type thermocouple and a three channel temperature logger, MTM-380SD, with real
time data logger. Results show that the experimental steady state temperatures are lower than the simulated steady state
temperatures by 1.10, 1.52, 1.17 and 0.73% for pulse loads of 460W, 675W, 1015W and 1500W, respectively.
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Staff publications
Keywords
Power inverter , IRF 3205 MOSFET , Stress , Thermally induced failure , Research Subject Categories::TECHNOLOGY::Engineering mechanics
Citation
Onoroh, F., Enibe, S. O., & Adewumi, O. O. (2018). Thermal model and experimental validation of IRF 3205 MOSFET switches for inverter application. FUW Trends in Science & Technology, 3(1), 73-78.