Thermal model and experimental validation of IRF 3205 MOSFET switches for inverter applications

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dc.contributor.authorOnoroh, F.
dc.contributor.authorEnibe, S.O
dc.contributor.authorAdewumi, O.O
dc.date.accessioned2020-01-20T09:04:38Z
dc.date.available2020-01-20T09:04:38Z
dc.date.issued2018-03-05
dc.descriptionStaff publicationsen_US
dc.description.abstractPower inverters operate under dynamic loads; the varying loads cause thermal expansion and contraction, which stress the internal boundaries between the material layers in the semiconductor. Eventually, the stress wears out the semiconductor module which ultimately leads to thermally induced failure. The primary goal of this article is to present thermal model for the IRF 3205 MOSFET chip switching operation for a power inverter. The solution of the models is implemented in MATLAB R2013a environment to obtain the transient temperature profile. The transient device temperatures are recorded with a K-type thermocouple and a three channel temperature logger, MTM-380SD, with real time data logger. Results show that the experimental steady state temperatures are lower than the simulated steady state temperatures by 1.10, 1.52, 1.17 and 0.73% for pulse loads of 460W, 675W, 1015W and 1500W, respectively.en_US
dc.description.sponsorshipTETFUNDen_US
dc.identifier.citationOnoroh, F., Enibe, S. O., & Adewumi, O. O. (2018). Thermal model and experimental validation of IRF 3205 MOSFET switches for inverter application. FUW Trends in Science & Technology, 3(1), 73-78.en_US
dc.identifier.urihttps://ir.unilag.edu.ng/handle/123456789/7456
dc.language.isoenen_US
dc.relation.ispartofseriesFUW Trends in Science & Technology;Vol.3(1)
dc.subjectPower inverteren_US
dc.subjectIRF 3205 MOSFETen_US
dc.subjectStressen_US
dc.subjectThermally induced failureen_US
dc.subjectResearch Subject Categories::TECHNOLOGY::Engineering mechanicsen_US
dc.titleThermal model and experimental validation of IRF 3205 MOSFET switches for inverter applicationsen_US
dc.typeArticleen_US
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